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针对在Ｍ ＥＭＳ加工中所要求的低温键合，提出了一种用氧等离子体激活处理来降低退火温度的低温硅片直接键合技术。研究了低温ＳＤＢ的特性并得出了经过氧等离子体处理的硅片界面能比常规同条件的ＳＤＢ提高近１０ 倍的结论。最后详细探讨了其键合机理。
Aiming at the low temperature bonding required in M EMS processing, a low temperature direct bonding technique of wafer using oxygen plasma activation to reduce the annealing temperature was proposed. The characteristics of low temperature SDB were studied and the conclusion was obtained that the interface of silicon wafer treated by oxygen plasma treatment is nearly 10 times higher than that of conventional SDB. Finally, the bonding mechanism is discussed in detail.