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本文根据FET统一化特性方程对MOSFET放大电路的静态工作点进行了定量分析,同时论述了参数选择方面的有关问题。尤其对增强型FET组成的单元放大电路的静态工作点,本文用“漏极饱和电流”参数进行了探讨。因而对各种类型的场效应管单元放大电路,即使采用电压电流混合反馈的偏置电路都可用统一的方程和图解法直接确定静态工作点。从而使MOSFET放大电路的性能分析和参数选择变得容易。
In this paper, the static operating point of the MOSFET amplifier circuit is quantitatively analyzed according to the unified characteristic equation of the FET, and the related problems in parameter selection are also discussed. Especially for the static operating point of the unit amplification circuit composed of the enhancement FET, this paper discusses the parameters of “saturation current drain”. Therefore, various types of FET unit amplifier circuit, even if the use of voltage and current mixed feedback bias circuit can be unified equation and graphical method to directly determine the static operating point. So that MOSFET amplifier circuit performance analysis and parameter selection easier.