论文部分内容阅读
A chemical method is proposed to bond photo-sensitive dyes directly to the surface of polished monocrystalline silicon. A methincyanine dye and a trimethincyanine dye have been bonded covalently onto silicon surface through Si—N bond, which are characterized by XPS technique and laser Raman spectra. Photovoltaic effect has been observed with the In/dye/n-Si sandwich devices composed of the dye-bonded n-Si wafers. Significant spectral response shows the characteristic absorptance maxima of the bonded dyes.
A chemical method is proposed to bond photo-sensitive dyes directly to the surface of polished monocrystalline silicon. A methincyanine dye and a trimethincyanine dye have been bonded covalently onto silicon surface through Si-N bond, which are characterized by XPS technique and laser Raman spectra . Photovoltaic effect has been observed with the In / dye / n-Si sandwich devices composed of the dye-bonded n-Si wafers. Significant spectral response shows the characteristic absorptance maxima of the bonded dyes.