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研究了真空退火对TbCo薄膜结构和磁性能的影响。结果表明:薄膜从溅射态的非晶薄膜转化为退火态的微晶薄膜,并以(100)面择优取向,其c轴平行于基片。在真空退火不改变TbCo薄膜的成分的条件下,发现TbCo薄膜从溅射态的垂直磁化膜转化为退火态的面内膜。
The effect of vacuum annealing on the structure and magnetic properties of TbCo films was investigated. The results show that the film is transformed from the as-sputtered amorphous film into the as-annealed microcrystalline film with the (100) plane as the preferred orientation with the c-axis parallel to the substrate. Under the conditions of vacuum annealing without changing the composition of the TbCo film, it was found that the TbCo film was transformed from a sputtered perpendicular magnetization film into an annealed in-plane film.