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测量了在多孔硅形成初期阶段的电流I-电压V曲线,计算了硅表面原子吸附不同元素时电荷的转移量.指出在(单晶硅/电解液)界面处存在一电偶层,它影响着多孔硅材料的形成和性质.讨论了制备中氢氟酸(HF)浓度、电流密度和光照等因素对材料形成的影响.
The current I-voltage V curve at the initial stage of the formation of porous silicon was measured and the amount of charge transfer by the atomic adsorption of different elements on the silicon surface was calculated. It is pointed out that there is a galvanic layer at the (monocrystalline silicon / electrolyte) interface which affects The formation and properties of porous silicon materials were discussed.The influence of hydrofluoric acid (HF) concentration, current density and illumination on the formation of materials was discussed.