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第1期 我国半导体学者专家新春笔谈会——应采取有力措施加快集成电路和半导体的发展………………………………………………… ·,…………………………··,………·(1) 硅中过渡金属深杂质态的量子化学研究…………孙仁安 陈福荫 朱龙根 冯星洪(7) 异质结扩散模型电流传输理
No. 1, China's semiconductor experts and scholars in the spring of the pen meeting - should take effective measures to speed up the development of integrated circuits and semiconductors ..................................................... (1) Quantum Chemistry Study of Deep Impurity States of Transition Metal in Silicon ....................... Sun Renan Chen Fuyin Zhu Longgen Feng Xinghong (7) Current Transfer Theory of Heterojunction Diffusion Model