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设计并利用 MOCVD在 (311) Ga As衬底上生长了 12 .5个周期的 Al0 .6 Ga0 .4 As/ Al As黄绿光分布式 Bragg反射 (DBR)体系 ,测量了白光反光谱及其外延片峰值波长分布 ,反射率 90 %以上 ,波长不均匀性在 1.0 %以下 ;利用了 X射线双晶衍射对其进行结构表征 ,5 80 nm波长 DBR结构周期为 84 .5 nm。
The Al0.6Ga0.4As / AlAs yellow-green light distributed Bragg reflectance (DBR) system was grown on (311) GaAs substrate by MOCVD. The white light reflectance spectrum and its epitaxial wafer Peak wavelength distribution, the reflectivity is above 90% and the wavelength nonuniformity is below 1.0%. The structure characterization is carried out by X-ray double crystal diffraction. The structure period of DBR at 580 nm is 84.5 nm.