Modeling of Defect Production in Helium-implanted Silicon Carbide Crystal—an explanation of our TEM

• 作 者: S.E.Donnelly J.H.Evans
• 机 构: Joule Physics Laboratory,School of Sciences,University of Salford,Greater Manchester,M5 4WT,UK.,27 C
• 出 处: IMP & HIRFL Annual Report
• 发表日期: 2002年00期
• 关键词: explanation helium implanted Sharp regime bubble implantation sectional annealin

In this work we present a model in an effort to give an explanation of the observed cross-sectional features described as follows of the bubble layer of the intermediate dose regime (Fig.1) in our recent TEM study of helium-implanted 4H-SiC.1. Sharp boundaries of the bubble layer-helium bubbles were formed in a well-defined depth region, which

In this work we present a model in an effort to give an explanation of the bubble cross section of the intermediate dose regime (FIG. 1) in our recent TEM study of helium-implanted 4H-SiC .1. Sharp boundaries of the bubble layer-helium bubbles were formed in a well-defined depth region, which