,Electronic structures of impurities and point defects in semiconductors

• 作 者: Yong Zhang
• 机 构: Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlo
• 出 处: 中国物理B（英文版）
• 发表日期: 2018年11期
• 关键词: semiconductor shallow impurity deep impurity bound exciton density-functional th

A brief history of the impurity theories in semiconductors is provided.A bound exciton model is proposed for both donor-and acceptor-like impurities and point defects,which offers a unified understanding for "shallow" and "deep"impurities and point defects.The underlying physics of computational results using different density-functional theorybased approaches are discussed and interpreted in the framework of the bound exciton model.