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以硫酸铜、乳酸和乙二胺四乙酸二钠(Na_2EDTA)为反应体系,采用电化学沉积法制备棒状纳米氧化亚铜(Cu_2O)薄膜,探讨了Na_2EDTA和十二烷基苯磺酸钠(SDBS)用量、p H值、沉积电压和沉积时间对棒状纳米Cu_2O开路电压的影响。结果表明,当沉积液中含有30 m L的0.1 mol/L CuSO_4溶液、10 m L的3 mol/L乳酸溶液、3 m L的0.2 mol/L Na_2EDTA和4 m L的0.1 mol/L SDBS,其p H值为12.5,沉积电压为1.3 V,电沉积30 min时,所得样品的开路电压可达0.392 V。能谱仪(EDS)分析结果显示,样品Cu_2O中Cu和O元素的质量分数分别为56.85%和27.99%,原子数分数分别为26.68%和52.18%,对Cu元素的原子数分数进行归一化处理,O的质量分数和原子数分数分别为7.16%和13.34%。扫描电子显微镜(SEM)结果显示,样品Cu_2O为棒状,长度为50~200 nm,直径约为10 nm。X射线衍射(XRD)分析结果表明,在2θ为29.632°,36.503°,42.402°,61.520°和73.699°处出现5个衍射峰,分别对应于Cu_2O(110),(111),(200),(220)和(311)晶面,为立方晶型。
The cuprous nanocopper (Cu_2O) thin films were prepared by electrochemical deposition using copper sulfate, lactic acid and disodium ethylenediaminetetraacetate (Na_2EDTA) as reaction system. The effects of Na_2EDTA and sodium dodecyl benzene sulfonate (SDBS) ) Dosage, p H value, deposition voltage and deposition time on the open-circuit voltage of rod-shaped nano-Cu 2 O. The results showed that when the concentration of 30 mol L -1 CuSO 4 solution, 10 mL 3 mol / L lactic acid solution, 3 mL 0.2 mol / L Na 2EDTA and 4 mL 0.1 mol / The p H value is 12.5, the deposition voltage is 1.3 V, the open circuit voltage of the obtained sample can reach 0.392 V at 30 min after electrodeposition. EDS analysis showed that the mass fraction of Cu and O in sample Cu_2O was 56.85% and 27.99% respectively, and the atomic fraction was 26.68% and 52.18%, respectively. The atomic fraction of Cu was normalized The mass fraction and atomic number of O were 7.16% and 13.34% respectively. Scanning electron microscopy (SEM) results show that the sample Cu_2O rod shape, a length of 50 ~ 200 nm, a diameter of about 10 nm. The results of X-ray diffraction (XRD) show that there are 5 diffraction peaks at 2θ of 29.632 °, 36.503 °, 42.402 °, 61.520 ° and 73.699 °, respectively corresponding to Cu 2 O, 110, 111, 200, (220) and (311) crystal plane, a cubic crystal form.