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本文着重对微波等离子体化学气相沉积法高速沉积的 a-Si∶H 膜的物理性能进行评价研究.测量了沉积膜的光电性能、暗电导激活能、光禁带宽度、光吸收特性、沉积膜中悬键态密度以及氢含量等,并讨论沉积条件对膜性能的影响.结果表明,在沉积速率高达30～90(?)/s 情况下,膜的光电导(光照强度10~5Lux)与暗电导比值可达10~3～10~5,暗电导率从10~(-3)到10~(-11)((?)cm)~(-1),其激活能在0.23～0.88eV 之间(0～200℃温度范围内),光禁带宽度为1.40～2.20eV,氢含量约为2～20%.
In this paper, the physical properties of a-Si: H films deposited by microwave plasma chemical vapor deposition at high speed are studied emphatically.The photoelectric properties, dark conductance activation energy, optical forbidden band width, optical absorption properties, And the influence of deposition conditions on the properties of the films were investigated.The results show that the photoconductivity of the films (light intensity 10 ~ 5 Lux) and The dark conductivity can reach 10 ~ 3 ~ 10 ~ 5, dark conductivity from 10 ~ (-3) to 10 ~ (-11) cm ~ (-1), and its activation energy ranges from 0.23 ~ 0.88eV (0 ~ 200 ℃ temperature range), optical forbidden band width of 1.40 ~ 2.20eV, hydrogen content of about 2 to 20%.