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SEBISIT器件充分利用了SIT器件的栅的电场屏蔽作用,一方面有效地抑制了高反压下耗尽层向基区内的扩展,实现了高压薄基区;另一方面保证了器件有接近于BV_(cbo)的BV_(ceo),实现了较薄外延层下有较高的BV_(ceo),本文对此器件作了较全面的分析。实验验证了SIT屏蔽效应的存在,并试制出BV_(ceo)为225V,f_T大于400MHz的功率加固器件,其φ0.5为常规高压器件的60多倍,有效地改善了高压晶体管的抗辐射加固性能。
The SEBISIT device takes full advantage of the electric field shielding effect of the gate of the SIT device and effectively inhibits the expansion of the depletion layer into the base region under high backpressure and realizes the high-voltage thin base region. On the other hand, it ensures that the device has close to BV_ (cbo) BV_ (ceo), to achieve a thinner epitaxial layer higher BV_ (ceo), this article made a more comprehensive analysis of the device. Experiments verify the existence of SIT shielding effect, and try out the BV_ (ceo) of 225V, f_T greater than 400MHz power reinforcement device, φ0.5 60 times higher than the conventional high-voltage devices, effectively improve the high-voltage transistor radiation reinforcement performance.