论文部分内容阅读
题 目工作报告期 页铝一Ⅳ型硅肖特基接触界面JD型层的研究……………………………………一～二 1超突变2.]一Ⅳ结空间电荷区……………………………………………………一～二 12对硅尸一Ⅳ结击穿电压蠕变时问特性理论的一个修正………………………一^v二20硅光敏管短波响应的
Title Work Report Period Aluminum Aluminum Ⅳ silicon Schottky contact interface JD type layer ...................................... one ~ two 1 hypermutation 2.] a Ⅳ junction space charge area ... .................................................................... One to two 12 on the silicon body a IV junction breakdown voltage creep asked when a feature of the theory of ........................... A ^ v two 20 silicon photosensitive tube shortwave response