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Er3+-doped Al2O3 films were deposited on silicon substrates by reactive closed-field unbalanced magnetron sputtering. The process parameters, such as target bias voltage, substrate bias voltage, O2 gas flows, sputtering gas pressure, were studied. The 1.53 tμm photoluminescence characteristicsfrom Er3+ were measured. The relations among the PL peak intensity, annealing temperatures, and pump power were experimentally investigated.