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本文用X射线双晶衍射术,结合摇摆曲线的计算机模拟和电学测量,研究了 180keV Si+注入GaAs(100)样品及其退火过程中的结构变化.结果表明,注入态时Si原子基本上处在基体中的间隙位上,使点阵产生膨胀,在退火过程中逐渐进入替代位,但这一替代过程进行得并不彻底.当剂量高于 1×10~(13)cm~(-2)时,注入态就显著地产生了间隙Si原子进入替代位的过程.当剂量达到 1×10~(15)cm~(-2)时,经 800℃ 0.5 小时的炉退火仍然不能消除离子注入所引起的损伤和应变,大量Si原子留在间隙位上,使激活率难以提高.分析表明,空位和应力在Si原子从间隙位到替代位的过程中起了很大的作用,是GaAs中Si离子注入产生饱和现象的.主要原因.
In this paper, by X-ray double crystal diffraction and computer simulation of rocking curve and electrical measurements, the structural changes of GaAs (100) samples annealed by 180keV Si + implantation were investigated. The results show that the Si atoms are basically at In the interstitial spaces of the matrix, the dot matrix expands and gradually enters into the surrogate position during the annealing process, but the substitution process is not complete.When the dosage is higher than 1 × 10 ~ (13) cm ~ (-2) , The state of interstitial Si atoms was significantly implanted in the implanted state.When the dose reached 1 × 10 ~ (15) cm ~ (-2), the annealing at 800 ℃ for 0.5 hours could not eliminate the ion implantation Induced damage and strain, a large number of Si atoms remain in the interstitial sites, making it difficult to increase the activation rate.The analysis shows that vacancies and stresses play a significant role in the interstitial sites to substitution sites of Si atoms, Ion implantation produces saturation phenomenon. The main reason.