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用有机金属汽相淀积法(OMCVD)在CdTe上外延生长Hg_(1-x)Cd_xTe已试制成功。这种令人鼓午的结果表明:向研制大规模低成本生产这种重要的红外探测器材料迈出了重要的一步。然而,要成功地实现这种器件生产法就需要有高质量大面积CdTe衬底。用生产块体单晶CdTe来提供这种衬底太贵,对满足这种需要不大可能。另一种方法是在现成的衬底上生长CdTe薄外延层,其后再生长Hg_(1-x)Cd_xTe。首先研究用OMCVD法生长Ⅱ-Ⅳ化合物的是Manasevit和Simpson。在此初步研究
Epitaxial growth of Hg_ (1-x) Cd_xTe on CdTe by metalorganic vapor deposition (OMCVD) has been successfully made. This encouraging result shows that an important step toward the development of large-scale, low-cost production of this important infrared detector material is taken. However, successful implementation of this device production method requires high quality large area CdTe substrates. The production of bulk single crystal CdTe to provide such a substrate is too expensive to meet this need. Another method is to grow a thin CdTe epitaxial layer on a ready-made substrate and thereafter grow Hg_ (1-x) Cd_xTe. First of all, to study the growth of II-IV compounds by OMCVD are Manasevit and Simpson. In this preliminary study