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研究了单轴压应力对GaAs/AlGaAs/GaAs量子阱红外探测器(QWIP)吸收波长的影响。以量子阱电子干涉方法以及单轴压应力作用下量子阱应变理论为基础,分析了GaAs/AlGaAs/GaAs量子阱导带中子能级与应变的关系。理论上计算了单轴应力下四个QWIP吸收波长与应变的关系。结果表明,E1与E<1>能级之间的吸收波长和E(1)与EF能级之间的吸收波长随应变的增大而减小的幅度比E1与EF能级之间的吸收波长和E(0)与E1能级之间吸收波长随应变的增大减小的幅度大。
The effect of uniaxial compressive stress on the absorption wavelength of GaAs / AlGaAs / GaAs quantum well infrared detector (QWIP) was investigated. Based on the quantum well electronic interference method and the quantum well strain theory under uniaxial compressive stress, the relationship between the neutron energy levels and the strain of the GaAs / AlGaAs / GaAs quantum well conduction band is analyzed. The relationship between the absorption wavelength and the strain of four QWIPs under uniaxial stress was theoretically calculated. The results show that the absorption wavelength between the E1 and E <1> energy levels and the absorption wavelength between the E (1) and EF energy levels decrease with increasing strain than between the E1 and EF energy levels Wavelength and E (0) and E1 energy levels between the absorption wavelength decreases with the strain increases.