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硅外延层上自然氧化层中的界面态使汞-硅接触肖特基二极管反向偏置C—V特性偏离理想情况,给外延层杂质纵向浓度分布测定带来较大误差。当正向偏置电压等于自建电势0.6V时的归一化电容值明显偏离按外延层杂质浓度和自然氧化层厚度计算出来的平带电容值,就可判明有界面态存在。只要将样品在化学纯的氢氟酸中漂洗7分钟,即可使界面态减少到不可察觉的程度,然后再进行C—V测量,可保证测定结果的正确性。
The interfacial states in the native oxide layer on the silicon epitaxial layer deviate the C-V characteristics of the mercury-silicon contact Schottky diode from the ideal case, resulting in large errors in the determination of the longitudinal concentration distribution of the epitaxial layer impurities. When the forward bias voltage is equal to the built-in potential of 0.6V when the normalized capacitance value significantly deviates from the epitaxial layer impurity concentration and the natural oxide layer thickness calculated by the flat-band capacitance value, we can determine the presence of interface states. As long as the sample was washed in chemically pure hydrofluoric acid for 7 minutes, can reduce the interface state to the degree of imperceptible, and then the C-V measurement, to ensure the accuracy of the determination results.