离子束辅助沉积制备TiO_2-Nb_2O_5氧敏薄膜

• 作 者: 牟海川 任琮欣 陈国梁 朱建中 杨石奇 柳襄怀
• 机 构: 中国科学院上海冶金研究所离子束开放研究实验室,中国科学院上海冶金研究所传感技术国家重点实验室
• 出 处: 功能材料与器件学报
• 发表日期: 1997年01期
• 关键词: 离子束辅助沉积 TiO_2-Nb_2O_5 薄膜性能 退火温度 金红石结构 衍射谱 特性比 结晶相 氧传感器 特性测试

采用离子束辅助沉积方法在Ａｌ２Ｏ３陶瓷衬底上制备了ＴｉＯ２Ｎｂ２Ｏ５氧敏薄膜。考察了薄膜组分比及退火温度对薄膜氧敏特性和结构的影响。电阻氧分压特性测试结果表明，纯Ｎｂ２Ｏ５薄膜的氧敏特性优于纯ＴｉＯ２薄膜；掺入少量的Ｔｉ可使Ｎｂ２Ｏ５薄膜的氧敏特性提高，以５ｍｏｌ％ＴｉＯ２掺杂的Ｎｂ２Ｏ５薄膜最佳；过量掺杂则使Ｎｂ２Ｏ５薄膜的氧敏特性明显变差。在５ｍｏｌ％ＴｉＯ２Ｎｂ２Ｏ５薄膜中再掺入少量的Ｐｔ（０３％０５％）可使其氧敏特性更好，而且其响应时间大大缩短。Ｘ射线衍射谱（ＸＲＤ）和Ｘ射线光电子谱（ＸＰＳ）分析表明，在退火后的ＴｉＯ２Ｎｂ２Ｏ５薄膜中Ｎｂ２Ｏ５为单斜（Ｍｆｏｒｍ）结晶相，而掺杂的Ｔｉ以非晶的ＴｉＯ２形式存在，即使在高达３４ｍｏｌ％ＴｉＯ２Ｎｂ２Ｏ５薄膜中也不例外。纯ＴｉＯ２膜为金红石结构。不同退火温度（９００１１０００Ｃ）对薄膜的氧敏特性和结构无明显影响。

TiO2Nb2O5 oxygen-sensitive thin films were prepared on Al2O3 ceramic substrates by ion beam-assisted deposition. The effects of film composition ratio and annealing temperature on the oxygen sensitivity and structure of the films were investigated. The results of resistance-oxygen partial pressure test show that the oxygen sensitive properties of pure Nb2O5 thin films are better than that of pure TiO2 thin films. Adding a small amount of Ti can improve the oxygen sensitive properties of Nb2O5 thin films and Nb2O5 thin films doped with 5 mol% TiO2 are the best. Oxygen-sensitive properties of Nb2O5 films were significantly deteriorated by excessive doping. The addition of a small amount of Pt (03% 05%) to 5mol% TiO2Nb2O5 thin film can make its oxygen sensitivity better and its response time is greatly shortened. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis showed that in the annealed TiO2Nb2O5 thin film, Nb2O5 is a monoclinic (M form) crystal phase, while the doped Ti is amorphous TiO2 Exists, even in up to 34mol% TiO2  Nb2O5 film is no exception. Pure TiO2 film is rutile structure. Different annealing temperature (900  11000C) on the oxygen sensitivity of the film structure and no significant effect.