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在原子力显微镜的接触扫描模式下,研究了半导体ZnO纳米棒的压电放电特性.采用两步湿化学法制备沿c轴择优生长的ZnO纳米棒阵列;利用镀Pt探针接触扫描ZnO纳米棒获得峰值达120pA电流脉冲,脉冲持续时间可达30ms,电流脉冲与纳米棒的形貌存在对应关系.镀Pt探针与ZnO纳米棒接触形成肖特基二极管,I-V特性研究表明放电的ZnO纳米棒压电电势必须大于0.3V,以驱动肖特基二极管并输出电流;放电时肖特基二极管的结电阻达吉欧(GΩ)量级,是影响压电电势输出的主要因素.
The piezoelectric properties of the semiconducting ZnO nanorods were investigated under the contact scanning mode of atomic force microscope.The ZnO nanorod arrays were prepared by the two-step wet-chemical method, which were preferentially grown along the c-axis. Peak pulse current of 120pA pulse duration of up to 30ms, the current pulse and the shape of the nanorods corresponding to Pt plating probe and ZnO nanorods contact to form a Schottky diode, IV characteristics of the discharge of ZnO nanorods The electric potential must be greater than 0.3V to drive the Schottky diode and output current; the junction resistance of the Schottky diode during discharge reaches the order of GΩ, which is the main factor affecting the piezoelectric potential output.