论文部分内容阅读
采用传输矩阵法对多量子阱结构导带子能级位置进行理论计算,确定其量子阱宽度、势垒高度等物理参数。用MBE设备进行GaAs/AlGaAs多量子阱红外探测器结构材料的生长。利用傅里叶变换红外光谱仪对所制作的器件进行了光谱测量,不同外延材料的对比实验结果表明,器件的峰值响应波长与理论计算结果吻合较好;由传输矩阵法计算确定的多量子阱导带子能级位置而推算得到的响应波长与实际器件的响应波长有良好的一致性。
The transfer matrix method is used to calculate the sub-level position of the conduction band of MQW structure, and the physical parameters such as the quantum well width and barrier height are determined. Growth of GaAs / AlGaAs Multiple Quantum Well Infrared Detector Structural Materials Using MBE Devices. The spectra of the fabricated devices were measured by Fourier transform infrared spectroscopy. The experimental results of different epitaxial materials show that the peak response wavelength of the device is in good agreement with the theoretical calculation results. The multi-quantum well guide The calculated response wavelength of the band level position is in good agreement with the actual device response wavelength.