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本文用热电势和直流电导变温测量相结合的方法,研究了离子束轰击单晶GaAs、GaP和Inp得到的薄层非晶态化合物半导体材料的电学行为。结果表明,离子轰击非晶化是研究和了解非晶化合物半导体基本特性的一种良好手段。
In this paper, the electrical behavior of thin amorphous semiconductor films obtained by ion beam bombardment of single-crystal GaAs, GaP and Inp was studied by a combination of thermoelectric power and DC conductivity measurement. The results show that ion bombardment amorphization is a good way to study and understand the basic characteristics of amorphous compound semiconductors.