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无位错硅单晶中的微缺陷严重地影响器件制作,为了推动这方面工作的开展,我们对微缺陷的观察显示作了一些探讨。用于直接观察点阵缺陷的方法有:腐蚀金相法、红外显微镜、缀饰法、透射电子显微镜及X射线形貌法。这些方法除了X射线法外,均需破坏样品,同时也难以保存其中缺陷的原始状态。利用X射线形貌图相观察晶格缺陷是完全非破坏性的技术,并且它能一次记录下大面积样品中的全部缺陷,因而可以直接检测生产工艺过程中的晶片缺陷。由于微缺陷的晶格畸变区域较小,用X射线形貌法不能直接观察,通常采用铜缀饰(或锂缀饰)后再作观察,这就使它失去了非
Microdefects in dislocation-free silicon single crystals have a serious impact on device fabrication. In order to promote this work, we have made some discussions on the observation of micro-defects. Methods for direct observation of lattice defects include: corrosive metallography, infrared microscopy, embellishment, transmission electron microscopy and X-ray topography. In addition to the X-ray method, these methods are required to destroy the sample, but also difficult to preserve the original state of defects. The use of X-ray topography to observe lattice defects is a completely non-destructive technique, and it can record all defects in a large area of samples at a time, thus directly detecting wafer defects in the production process. Due to the small lattice distortion area of micro-defects, X-ray topography can not be directly observed, usually copper embellishment (or lithium decoration) and then observe, which makes it lose the non