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非晶态半导体材料不仅是一种优质的太阳能电池材料,而且是一种很好的半导体器件表面钝化膜材料。用半绝缘性的a-Si:H膜代替Si0_2膜做硅表面钝化膜,能很好的屏蔽外电场和钝化层表面积累的电荷所产生的电场;能有效的阻挡金属钠离子移动。所以可以用来做成MIS,MISS等器件。然而,半缘绝性非晶硅薄膜和其它介质膜一样,与金属有互作用现象。严重时,能引起器件退化。本文就此互作用现象,对Al/a-Si:H/C-Si薄膜系统进行了AES及SEM实验分析,并提出了一些防止的措施。
Amorphous semiconductor material is not only a good solar cell material, but also a good semiconductor device surface passivation film material. Use semi-insulating a-Si: H film instead of Si0_2 film as the silicon surface passivation film, which can well shield the electric field generated by the electric field and the accumulated charge on the surface of the passivation layer; it can effectively block the movement of sodium metal ions. So can be used to make MIS, MISS and other devices. However, semi-edge-insulative amorphous silicon films, like other dielectric films, interact with metals. Serious, can cause device degradation. In this paper, the interaction between Al / a-Si: H / C-Si thin film system AES and SEM experimental analysis, and put forward some measures to prevent this phenomenon.