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研究不掺杂和掺Eu的BaMgAl10O17(BAM)荧光粉在真空紫外激发的光致发光(PL)、热致发光(TL)性能。研究发现不掺杂的BAM发射的空穴与缺陷产生的电子陷阱有很大的关系。我们认为这些缺陷与BAM空穴导电层的氧空穴有关。我们还认为掺了Eu2+的BAM主体存在着缺陷。基于这些结果,我们提出了一种真空紫外激发BAM:Eu2+荧光粉的能量转移模型。
The photoluminescence (PL) and thermoluminescence (TL) properties of undoped and Eu-doped BaMgAl10O17 (BAM) phosphors were investigated. It is found that the holes emitted by undoped BAM have a great relationship with the electron traps generated by defects. We think these defects are related to oxygen vacancies in the BAM hole conducting layer. We also consider the BAM host doped with Eu2 + as flawed. Based on these results, we propose an energy transfer model of vacuum ultraviolet excited BAM: Eu2 + phosphors.