Oxygen vacancy and Mn2+induced ferromagnetism in Mn-doped ZnO thin films

• 作 者: GUAN SuJun NASU Naho ZHANG Yu
• 机 构: DepartmentofPhysics,DepartmentofRobotics,DepartmentofMaterialsScienceandEngineering
• 出 处: 中国科学:技术科学英文版
• 发表日期: 2019年10期
• 关键词: OXYGEN VACANCY Mn2+ ZnO THIN FILMS FERROMAGNETISM

With the purpose of investigating the origin of ferromagnetism(FM), Mn-doped Zn O thin films had been fabricated by radio frequency(rf) magnetron sputtering and subsequent anneal process. The characterization of the Mn-doped Zn O thin films was conducted