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The surface morphology,electrical properties and optical properties of Si doped n-type GaN were investigated. The intentional SiH4 doped GaN films were grown by metal organic chemical vapor deposition with the electron concentration varying from 3×1016 cm-3 to 5.4×1018 cm-3. The surface morphology shows that the roughness and dislocation pits increase as the mass flow rate of SiH4 increases,which indicates that the quality of GaN degrades gradually. The activation energy of Si in GaN with different n concentrations varies from 12 to 22 meV,which may originate from the interactions of donor wave functions. The carrier transport mechanism with increasing temperature from 100 to 420 K was concluded as the complex effect of both impurity scattering and phonon scattering. The position of the near band edge emission peak was determined by both renormalization of the band gap and B-M effect. The intensity variations of the yellow luminescence could be explained by the change of Ga vacancy concentration caused by Si doping.
The intentional SiH4 doped GaN films were grown by metal organic chemical vapor deposition with the electron concentration varying from 3 × 1016 cm -3 to 5.4 × 10 18 cm -3. The surface morphology shows that the roughness and dislocation pits increase as the mass flow rate of SiH4 increases, which indicates that the quality of GaN degrades gradually. The activation energy of Si in GaN with different n concentrations varies from 12 to 22 meV , which may originate from the interactions of donor wave functions. The carrier of the transport mechanism with increasing temperature from 100 to 420 K was concluded as the complex effect of both impurity scattering and phonon scattering. The position of the near band edge emission peak was determined by both renormalization of the band gap and BM effect. The intensity variations of the yellow luminescence could be explained by the change of Ga vacancy c oncentration caused by Si doping.