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本文由泊松方程和连续性方程在某种假设下推导得端电压方程,用以研究了具有 PTF>1及均匀载流子漂移速度的n~+PP~+(或P~+nn~+)、n~+pn~+(或p~+np~+)和MSM型硅雪崩二极管的交流特性.利用逐步近似法得到分析形式的解,表明这类器件从低频至某一特征的频率范围内均显示负阻.负阻在低频时很小,它随着频率的增大而增大,直到某一频率f_m时达极小值,然后很快地由负阻过渡至一正阻极大值,再随频率的增大而下降,最后渐近于零.
In this paper, the Poisson’s equation and the continuity equation are derived under certain assumptions to derive the terminal voltage equation for the study of n ~ + PP ~ + (or P ~ + nn ~ +) with PTF> 1 and uniform carrier drift velocity ), N ~ + pn ~ + (or p ~ + np ~ +) and MSM-type silicon avalanche diode.The analytical solutions are obtained by the stepwise approximation method, which shows that the frequency range from low frequency to a certain characteristic Negative resistance is shown in the negative resistance is very small at low frequencies, it increases with the frequency increases, until a certain frequency f_m reached a minimum, and then quickly transition from negative resistance to a large positive resistance Value, and then decrease with increasing frequency, finally asymptotic to zero.