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报道了用硅离子注入热氧化生长的SiO2 层后热退火的方法制备纳米硅样品,并在室温下测量了样品的光致发光谱及其退火温度的关系.实验结果表明,在800℃以下退火的样品的发光是由于离子注入而引入SiO2 层的缺陷发光.在900℃以上退火,才观察到纳米硅的发生,在1100℃下退火,纳米硅发光达到最强.纳米硅的发光峰随退火温度升高而红移呈量子尺寸效应.在直角散射配置下,首次观察到纳米硅的特征拉曼散射峰,进一步证实了光致发光谱的结果.
It is reported that nanosilica samples are prepared by thermally implanting SiO2 layer grown by thermal oxidation after silicon ion implantation and annealed at a temperature below 800 ° C. The photoluminescence spectra and the annealing temperature of the samples are measured at room temperature Of the samples were luminescent due to the defects introduced into the SiO2 layer by ion implantation.The occurrence of nanosilica was observed only at 900 ℃ and annealed at 1100 ℃ and the luminescence of nanosilluminated reached the strongest.The luminescence peak of nanosilica changed with annealing The red-shift of temperature with the increase of quantum size effect.Under the configuration of right-angle scattering, the characteristic Raman scattering peak of nanosilica was observed for the first time, which further confirmed the photoluminescence spectrum.