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本文介绍了利用半导体硅材料制作的真空微电子器件的核心部件,场致发射硅锥阴极,的工艺研究及实验结果。提出了两步腐蚀的工艺方案,制成了形状理想的锥体阴极。
In this paper, the core components of field devices and field-emission silicon cone cathode made of semiconductor silicon are introduced. Proposed a two-step etching process, made of the ideal shape of the cone cathode.