【摘 要】
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There is an increasing need for high performance oscillators as the faster transmission networks demand for high fre-quency signals.Opto-electronic oscillators (OEO) enable us to make better oscillators in terms of size,weight and power.In this paper,phot
【机 构】
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Department of Electronics and Communication Engineering,Ramaiah University of Applied Sciences,Banga
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There is an increasing need for high performance oscillators as the faster transmission networks demand for high fre-quency signals.Opto-electronic oscillators (OEO) enable us to make better oscillators in terms of size,weight and power.In this paper,photonic integration is proposed for realizing the OEO with micro ring resonator (MRR) and ra-dio-frequency (RF) amplifiers of monolithic microwave integrated circuit (MMIC),which can be used for generating 110 GHz sine wave.The OEO architecture is proposed and block diagram developed considering Silicon based MRR and three-stage RF amplifier based on GaN high-electron-mobility transistor (HEMT).A simulation model is devel-oped according to the Klein model of MRR and is validated against the calculated performance parameters.MRR di-mensions are calculated as with silicon on insulator (SOI) technology and a radius 5.27 μm for the device is derived.Free spectral range (FSR) of 48.52 nm and filter rejection ratio of 16.79 dB are obtained for this device.The proposed RF amplifier is modelled with GaN parameters derived from high frequency pinch-off model and with power amplifier considerations.The gain for this amplifier is obtained as 10.6 dB.The OEO design is developed in this project in such a way that the system can be manufactured with the existing methods.
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