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采用射频磁控溅射工艺,制备了一系列(Fe40Co40B20)1-xNix(x为原子分数)磁性薄膜,研究了样品在微波频段下的电磁性能。结果表明,通过调整Ni含量及合适的工艺参数可有效调控薄膜的微结构和电磁性能,且在(Fe40Co40B20)0.91Ni9薄膜样品中获得了优良的微波性能和高电阻率。其饱和磁化强度4πMs达到2.21T,复磁导率实部μ’在0.5～3GHz频率范围内大于195,铁磁共振频率fFMR达到3.16GHz,电阻率也达到276μΩ.cm。该薄膜可应用于GHz频段下电磁器件的设计中。
A series of magnetic films (Fe40Co40B20) 1-xNix (x is atomic fraction) were prepared by radio frequency magnetron sputtering. The electromagnetic properties of the samples were investigated in the microwave frequency range. The results show that the microstructure and electromagnetic properties of the films can be effectively controlled by adjusting the Ni content and the appropriate process parameters. The excellent microwave properties and high resistivity of the (Fe40Co40B20) 0.91Ni9 films were obtained. The saturation magnetization 4πMs reaches 2.21T. The real part μ ’of complex permeability is larger than 195 in the frequency range of 0.5-3 GHz, the ferromagnetic resonance frequency fFMR reaches 3.16 GHz and the resistivity also reaches 276 μΩ.cm. The film can be used in the design of electromagnetic devices in the GHz band.