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通过ＳＥＭ、ＴＥＭ研究了ＰＥＣＶＤ方法制备的ＳｎＯ＿２薄膜的显微结构，讨论了沉积速率与颗粒大小的关系；在Ｓｉ、陶瓷和ＫＢｒ３种不同衬底上沉积的ＳｎＯ＿２薄膜的差异以及退火对ＳｎＯ＿２膜结晶状态的影响。结果表明，ＰＥＣＶＤ方法制备的ＳｎＯ＿２薄膜是非晶态，具有柱状结构。退火使非晶ＳｎＯ＿２膜向着多晶方向转化，演化过程为：非晶大颗粒→超微粒多晶→晶粒长大。
The microstructure of SnO_2 thin films prepared by PECVD was studied by SEM and TEM. The relationship between the deposition rate and the grain size was discussed. The differences of SnO_2 films deposited on Si, ceramics and KBr substrates and the effects of annealing on SnO_2 film crystallization The impact of the state. The results show that the PECVD SnO_2 thin films are amorphous and have columnar structure. Annealing the amorphous SnO_2 film toward the direction of polycrystalline transformation, evolution as follows: amorphous large particles → ultrafine particles polycrystalline → grain growth.