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为了提高Cs-O激活后GaAs光阴极的稳定性,延长像管的使用寿命,从Cs-O激活方面着手进行研究,寻找解决途径。改变GaAs光阴极激活中的Cs过量,并在线监测真空环境下光电流的变化情况,寻找激活对GaAs光阴极稳定性的影响因素。分别进行3组5种比例的激活实验,在光电流下降至Cs峰峰值90%、70%、50%、30%和10%时给O进行交替激活。激活结束后,在低于1×10-8Pa的真空环境下在线监控30 min内的光电流,发现过Cs90%、70%、50%激活的光阴极稳定性好,过Cs30%次之,过Cs10%相对最差。结果表明:GaAs光阴极Cs-O激活时,Cs量越多,表面势垒的建构越完整,光阴极的稳定性就越好,对改善GaAs光阴极稳定性,延长使用寿命具有重要意义。
In order to improve the stability of GaAs photocathode after Cs-O activation and prolong the service life of the image tube, the Cs-O activation research is proceeded to find a solution. To change the Cs excess in the GaAs photocathode activation, and to monitor the photocurrent in the vacuum environment online, the influence factor of the activation on the photocathode stability was investigated. Three groups of five kinds of activation experiments were carried out respectively. When the photocurrent decreased to 90%, 70%, 50%, 30% and 10% of Cs peak, O was alternately activated. At the end of activation, the photocurrents within 30 min were monitored online under a vacuum of less than 1 × 10 -8 Pa. It was found that photocathodes with Cs90%, 70%, and 50% activation had good photocathode stability, followed by Cs30% Cs10% is the worst. The results show that when Cs-O is activated on GaAs photocathode, the more Cs is, the more complete the surface barrier is and the better photocathode stability is, which is of great significance to improve the photocathode stability and extend the service life.