,Transparent conducting indium-tin-oxide (ITO) film as full front electrode in Ⅲ-V compound solar ce

• 作 者: Pan Dai Jianya Lu Ming Tan Qingsong Wang Yuanyuan Wu Lian Ji Lifeng Bian Shulong Lu Hui Yang
• 机 构: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics,Chine
• 出 处: 中国物理B（英文版）
• 发表日期: 2017年3期
• 关键词: full indium-tin-oxide (ITO) electrode specific contact resistance solar cell

The application of transparent conducting indium-tin-oxide (ITO) film as full front electrode replacing the conventional bus-bar metal electrode in Ⅲ-V compound GalnP solar cell was proposed.A high-quality,non-rectifying contact between ITO and 10 nm N+-GaAs contact layer was formed,which is benefiting from a high carder concentration of the terrilium-doped N+-GaAs layer,up to 2× 1019 cm-3.A good device performance of the GaInP solar cell with the ITO electrode was observed.This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible Ⅲ-V solar cell.