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目前用于硅和砷化镓等晶体内部结晶缺陷与杂质的测定方法,是在试样表面安置电极,输入脉冲电压,通过试样静电容量的变化来判断其内在质量。于是,需要不断移动电极的安装位置,才能测得不同部位的质量情况,十分麻烦。最近,日本中央大学理工部研制成功“恒温扫描式定位分布测定装置”,由试样恒温柜、激光发生器与控制装置、主计算机及显示屏等组成。利用激光扫描照射试样表面,通过主计算机对试样产生的电流-时间变化数据分析处理,从而测得其内在质量的分布状况。激光射束直径2.7μm,以0.255μm/次在试样表面作间歇移动扫描,在150×150μm面积内有2500个测定点,测
At present, the methods for determining crystal defects and impurities in crystals such as silicon and gallium arsenide are to dispose electrodes on the surface of the sample, input a pulse voltage, and judge the intrinsic quality of the sample by the change of the electrostatic capacity of the sample. Therefore, the need to constantly move the electrode installation location, in order to measure the quality of different parts of the situation is very troublesome. Recently, the Central University of Japan Department of Science and Technology successfully developed “constant temperature scanning positioning distribution measuring device,” from the sample cabinet, the laser generator and control devices, the main computer and display components. The surface of the sample was irradiated by laser scanning and the current-time variation data of the sample was analyzed and processed by the host computer to measure the distribution of its intrinsic mass. Laser beam diameter 2.7μm, 0.255μm / time on the sample surface for intermittent scanning, in the 150 × 150μm area has 2500 measurement points, measuring