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碲化铋材料是目前已知的室温下性能优异的热电材料之一。本文利用射频磁控溅射在不同基片温度下制备了碲化铋薄膜。研究发现,基片温度对薄膜的微结构和表面形貌影响显著。随着温度的提高,薄膜内晶粒尺寸都不同程度地增加。基片温度100℃以上碲化铋薄膜为Bi2Te3相为主的多晶结构,并具有良好的c轴择优取向,形成了六角层状结构。基片温度250℃时薄膜转变为BiTe相,并在表面生成Te长条状颗粒。应力分析表明碲化铋薄膜与Si(100)基片之间的残余应力受温度影响明显。
Bismuth telluride materials are one of the most well-known thermoelectric materials known at room temperature. In this paper, bismuth telluride thin films were prepared by RF magnetron sputtering at different substrate temperatures. The study found that the substrate temperature on the film microstructure and surface morphology significantly. With the increase of temperature, the grain size in the film increases to some extent. The bismuth telluride thin film with a substrate temperature of 100 ° C. is a polycrystalline structure mainly composed of Bi 2 Te 3 phases and has a good c-axis preferred orientation and forms a hexagonal layered structure. When the substrate temperature is 250 ℃, the film is transformed into BiTe phase and Te strip-like particles are formed on the surface. Stress analysis shows that the residual stress between the bismuth telluride film and the Si (100) substrate is significantly affected by temperature.