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一、序言 半导体需要进行埃(A)量级的薄膜分析、微米范围的微区分析、纵向的浓度分布分析和ppb级的超微量分析,而且被测定的元素大多属于轻元素(Si、B、P、Na等)。具有上述特征的半导体分析随着半导体器件(从晶体管到高集成度半导体器件)的进展获得了发展。特别是薄膜分析和纵向的浓度分布分析,由于半导体器件制造—杂质注入技术等的进展而获得了飞速的发展。关于半导体分析的综述在《分析化学》和《应用物理》杂志(日刊)已有报道,半导体厂商目前所使用的分析仪
I. Introduction Semiconductors require thin film analysis on the order of A (A), micro-area analysis in the micrometer range, longitudinal concentration distribution analysis and ppb-level ultra-trace analysis, and most of the elements to be measured are light elements (Si, B, P, Na, etc.). Semiconductor analysis with the above characteristics has progressed with the progress of semiconductor devices, from transistors to highly integrated semiconductor devices. In particular, thin-film analysis and longitudinal concentration distribution analysis have progressed rapidly due to advances in semiconductor device fabrication-impurity implantation technology and the like. An Overview of Semiconductor Analysis There have been reports in Analytical Chemistry and Applied Physics (Journal) that the currently used analyzers used by semiconductor manufacturers