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以K2W2O7为助熔剂,采用泡生法生长钬镱双掺钨酸镧钾[Ho3+:Yb3+:KLa(WO4)2,Ho:Yb:KLW]晶体。通过热重–差热分析,确定晶体的熔点为1118 ℃,在熔点以下晶体没有相变,热稳定性很好。X射线衍射分析表明:所生长的晶体为四方晶系 Ho:Yb:KLW 晶体,晶胞参数为a=b=0.538nm,c=1.193nm。测量晶体的红外及Raman光谱,并对峰值进行了归属。晶体样品的吸收光谱显示:Yb3+在978nm处吸收峰较强,半峰宽为19nm,适合采用InGaAs半导体激光二极管来作为激励源。表明Yb3+对Ho3+具有敏化作用。
Using K2W2O7 as flux, holmium ytterbium and lanthanum potassium tungstate [Ho3 +: Yb3 +: KLa (WO4) 2, Ho: Yb: KLW] crystals were grown by bubble generation method. The thermogravimetry-differential thermal analysis shows that the melting point of the crystal is 1118 ℃. There is no phase transition below the melting point, and the thermal stability is good. X-ray diffraction analysis shows that the grown crystal is a tetragonal Ho: Yb: KLW crystal with unit cell parameters of a = b = 0.538 nm and c = 1.193 nm. The crystal’s infrared and Raman spectra were measured and the peaks assigned. The absorption spectrum of the crystal sample shows that Yb3 + has a strong absorption peak at 978 nm and a full width at half maximum of 19 nm, which is suitable for the excitation source of InGaAs semiconductor laser diode. Show that Yb3 + has a sensitizing effect on Ho3 +.