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以醋酸锌为原料、O/Ar的混合气体为携载气体,在500℃的温度下应用热蒸发法在p型Si基片上生长纳米ZnO薄膜,并研究了其形貌、结构和光电特性。X-射线(XRD)衍射结果显示所制备ZnO纳米晶体呈六角纤锌矿结构;扫描电子显微镜(SEM)观察发现生长的ZnO薄膜平整均匀,纳米晶体颗粒平均尺寸为25nm。应用紫外-可见光吸收谱分析了其吸收特性,发现该ZnO薄膜在紫外波段具有很强的吸收,其吸收边位于320nm处。由于量子限制效应,与体材料相比,该吸收边存在明显的蓝移。应用光致发光谱(PL)研究了其发光特性,发现该ZnO薄膜在近紫外以及蓝-绿光波段具有强烈的受激发射。最后,还研究了ZnO薄膜的电容-电压(C-V)特性。
ZnO as raw material and O / Ar as carrier gas, the ZnO thin film was grown on p-type Si substrate by thermal evaporation at 500 ℃, and its morphology, structure and photoelectric properties were studied. The results of X-ray diffraction (XRD) showed that the ZnO nanocrystals were hexagonal wurtzite structure. Scanning electron microscopy (SEM) observation showed that the grown ZnO films were uniform and uniform, and the average size of nanocrystalline particles was 25 nm. The absorption characteristics of the ZnO thin film were analyzed by UV-Vis absorption spectroscopy. The absorption band of the ZnO thin film was found to be strongly absorbed in the UV range and the absorption edge was located at 320 nm. Due to the quantum confinement effect, there is a clear blue shift of the absorption edge compared to the bulk material. The photoluminescence spectra (PL) were used to investigate the luminescent properties of ZnO thin films. The results show that the ZnO thin films have strong stimulated emission in the near ultraviolet and blue - green bands. Finally, the capacitance-voltage (C-V) characteristics of ZnO films were also investigated.