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本定时n型GaP单晶及掺氦P型外延层,进行了电子能谱分析,给出了材料的组分结构状态、化学位移,并讨论了材料质量的有关问题。
The present n-type GaP single crystal and the helium doped P-type epitaxial layer have been subjected to electron spectroscopy analysis, and the compositional state and chemical shift of the material have been given, and the related problems of material quality have been discussed.