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以NH3为掺N源,采用电子束反应蒸发技术生长了Mn和N共掺杂的Zn1-xMnxO:N薄膜,生长温度为300℃,然后在O2气氛中400℃退火0.5h.X射线衍射测量表明,Zn0.88Mn0.12O(Mn掺杂)薄膜或Zn0.88Mn0.12O:N(Mn和N共掺杂)薄膜仍具有单一晶相纤锌矿结构,未检测到杂质相.与不掺N的Zn0.88Mn0.12O薄膜相比,Zn0.88Mn0.12O:N薄膜的(002)晶面衍射峰向小角度方向偏移且半高宽变宽.Hall效应测量结果显示,Zn0.88Mn0.12O:N薄膜由退火前的n型导电转变为退火后的p型导电.室温磁特性测量结果表明,虽然原生Zn0.88Mn0.12O:N薄膜呈铁磁性,但其饱和磁化强度Ms折算到每个Mn2+仅为约0.20μB,且稳定性不理想,在大气中放置30d后Ms降低到原来的3%左右.退火处理不仅使Zn0.88Mn0.12O:N薄膜的室温Ms增大到每个Mn2+约为0.70μB,且在大气中放置30d后其Ms几乎不变.分析了Zn0.88Mn0.12O:N薄膜的铁磁性起源及退火导致其铁磁性增强并稳定的机理.
Using NH3 as the N source, the Zn1-xMnxO: N films co-doped with Mn and N were grown by electron beam reaction evaporation at a growth temperature of 300 ℃ and then annealed at 400 ℃ for 0.5h in an O2 atmosphere. X-ray diffractometry Zn0.88Mn0.12O (Mn doping) film or Zn0.88Mn0.12O: N (Mn and N co-doping) film still has a single crystal phase wurtzite structure, no impurity phase is detected. (002) plane of Zn0.88Mn0.12O: N thin film shifted to a small angle and its full width at half maximum (FWHM) broadened compared with that of Zn0.88Mn0.12O: N thin film.Hall effect measurement showed that Zn0.88Mn0.12O: N The film was changed from n-type conductivity before annealing to p-type conductivity after annealing.The measurement of magnetic properties at room temperature showed that although the native Zn0.88Mn0.12O: N film was ferromagnetic, its saturation magnetization Ms was converted to only one Mn2 + Is about 0.20μB, and the stability is not ideal, the Ms is reduced to about 3% after being left in the atmosphere for 30d.The annealing treatment not only increases the room temperature Ms of the Zn0.88Mn0.12O: N film to about 0.70 per Mn2 + μB, and its Ms almost does not change after being placed in the atmosphere for 30 days.The ferromagnetic origin of Zn0.88Mn0.12O: N thin film and the mechanism of its ferromagnetic strengthening and stabilization due to annealing were analyzed.