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采用Volterra级数法对4H-SiC射频MESFET的大信号非线性特性进行了分析,并研究了器件尺寸与线性度的关系。模型考虑了陷阱效应对非线性特性的影响,模拟结果能够较好地反映实验结果。进一步分析表明,在1GHz和1.01GHz频率下,当栅长从0.8μm增大到1.6μm,器件的输入(输出)三阶截取点从33.55dBm(36.26dBm)减小到18.1dBm(13.4dBm),1dB压缩点从24dBm下降到7.43dBm。为实际器件的线性化设计提供理论依据。
The large signal non-linearity of 4H-SiC RF MESFET is analyzed by Volterra series method, and the relationship between device size and linearity is studied. The model considers the effect of the trap effect on the nonlinearity, and the simulation results can better reflect the experimental results. Further analysis shows that the input (output) third-order intercept point of the device decreases from 33.55dBm (36.26dBm) to 18.1dBm (13.4dBm) when the gate length increases from 0.8μm to 1.6μm at 1GHz and 1.01GHz, , 1dB compression point down from 24dBm to 7.43dBm. The actual device for the linear design provides a theoretical basis.