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利用准分子脉冲激光晶化非晶硅薄膜是制备高密度尺寸可控的硅基纳米结构的有效方法之一.本文将脉冲激光对非晶硅超薄膜的影响处理为热传导问题,采用了基于Tersoff势函数的分子动力学方法模拟了在非晶氮化硅衬底上2.7nm超薄非晶硅膜的脉冲激光晶化过程.研究了不同激光能量对非晶硅薄膜晶化形成纳米硅的影响,发现在合适的激光能量窗口下,可以获得高密度尺寸可控的纳米硅薄膜,进而模拟了在此能量作用下非晶硅膜中成核与生长的机理与微观过程,并对晶化所获得的纳米硅薄膜的微结构进行了分析.
The use of pulsed laser to crystallize amorphous silicon thin film is one of the effective methods to fabricate high density and size-controlled silicon-based nanostructures.In this paper, the influence of pulsed laser on amorphous silicon thin film is treated as heat conduction problem, Molecular dynamics simulation of potential function simulates pulsed laser crystallization of 2.7nm ultrathin amorphous silicon film on amorphous silicon nitride substrate.The effect of different laser energy on the crystallization of amorphous silicon film into nanometer silicon The results show that under the suitable laser energy window, the nanosilica films with high density and controlled size can be obtained, and then the mechanism and microscopic process of nucleation and growth in amorphous silicon film under the action of this energy are simulated. The microstructure of the obtained nanocrystalline silicon film was analyzed.