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采用金属有机物化学气相淀积 (MOCVD)方法设计并生长了应变多量子阱 In Ga As/Al Ga As,并且对其进行了光致发光 (PL)谱、双晶 X射线衍射 (DXRD)谱和电化学 C- V等的测试。然后以 In Ga As/Al-Ga As作为有源层 ,以 Ga As衬底作为透明衬底 ,p面金属电极 Au Be合金作为镜面反射层 ,采用倒装技术制备了近红外发光二极管 (L ED)。在输入电流为 2 0 m A下的正向电压为 1.2 V左右 ,电致发光谱的峰值波长为 938nm,10 μA下的反向击穿电压为 5～ 6 V,在输入电流为 5 0 m A下得到输出功率 3.5m W,对应电压为 1.3V,在输入电流为 30 0 m A时得到最大输出功率为 12 m W。
The InGAs / AlGaAs multi-quantum wells have been designed and grown by metal organic chemical vapor deposition (MOCVD) method. The PL spectra, the double crystal X-ray diffraction (DXRD) Electrochemical C-V and other tests. Then, In GaAs / Al-GaAs was used as active layer, GaAs substrate was used as a transparent substrate and p-side Au Be alloy was used as the specular reflection layer. The near-infrared light-emitting diode ). The forward voltage is about 1.2 V at an input current of 20 mA, the peak wavelength of the electroluminescence spectrum is 938 nm, the reverse breakdown voltage at 10 μA is 5 to 6 V, and at an input current of 50 m A, the output power is 3.5mW, the corresponding voltage is 1.3V, and the maximum output power is 12mW when the input current is 30 0 mA.