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利用低速高电荷态Xeq+和Pbq+离子对在蓝宝石衬底上生长的GaN晶体膜样品进行辐照,并利用X射线光电子能谱(XPS)对样品表面化学组成和元素化合态进行了分析.结果表明,高电荷态离子对样品表面有显著的刻蚀作用;经高电荷态离子辐照的GaN样品表面氮元素贫乏而镓元素富集;随着入射离子剂量和所携带电荷数的增大,Ga—Ga键相对含量增大;辐照后,GaN样品中Ga—Ga键对应的Ga3d5/2电子的束缚能偏小,晶格损伤使内层轨道电子束缚能向低端方向偏移.
The samples of GaN crystal grown on sapphire substrates were irradiated by Xeq + and Pbq + ions at low speed and high voltage, and the chemical composition and elemental chemical states of the samples were analyzed by X-ray photoelectron spectroscopy (XPS) , The highly charged ions have a significant etching effect on the surface of the sample; the surface of the GaN sample irradiated by highly charged ions is depleted in nitrogen and the gallium is enriched; with the increase of incident ion dose and the number of charged charges, Ga The relative content of -Ga bond increases. After irradiation, the binding energies of Ga3d5 / 2 electrons corresponding to the Ga-Ga bonds in GaN samples are small, and the lattice damage can shift the electron binding energy of the inner orbit to the lower direction.