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在Si(100)衬底和Ti/Si(100)衬底上分别制备了ZnO薄膜,探讨了Ti缓冲层对ZnO薄膜结构和缺陷的影响,利用X射线衍射(XRD)测试了ZnO薄膜的晶体结构及择优取向,利用原子力显微镜(AFM)观察ZnO薄膜的表面粗糙度(RMS),利用光致发光(PL)光谱检测了ZnO薄膜的缺陷,利用四探针法测试了ZnO薄膜的电阻率。结果表明,在Ti/Si(100)衬底上、衬底温度350℃的条件下,制备的ZnO薄膜表面光滑、缺陷少、电阻率高且具有高C轴取向。本文这一工作对于压电薄膜缺陷分析及高性能ZnO的声表面波(SAW)器件研制有重要意义。
ZnO thin films were prepared on Si (100) and Ti / Si (100) substrates respectively. The effects of Ti buffer layer on the structure and defects of ZnO thin films were investigated. The crystal structure of ZnO thin films was investigated by X-ray diffraction The surface roughness (RMS) of ZnO films was observed by atomic force microscopy (AFM). The defects of ZnO films were detected by photoluminescence (PL) spectroscopy. The resistivity of ZnO films was measured by four probe method. The results show that ZnO thin films prepared on Ti / Si (100) substrates at 350 ℃ have smooth surface, few defects, high resistivity and high C-axis orientation. This work is of great significance to the piezoelectric film defect analysis and the development of high performance ZnO surface acoustic wave (SAW) devices.