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1 引言 微波小功率低噪声晶体管和微波功率晶体管是机电部十三所传统的研究领域之一。作为主要的三端微波半导体器件之一的硅微波器件在六十年代末期低噪声器件已趋成熟,器件性能已经接近理论设计的物理极限。1966年,美国的米德提出砷化镓金属半导体场效应晶体管,或称砷化镓场效应管(简称GaAsMES FET)。砷化镓材料在迁移率等方面的性能比硅材料优越得多,GaAs MES FET的微波性能更使硅微波器件望尘莫及,因此,
1 Introduction Microwave Low Power Low Noise Transistors and Microwave Power Transistors are one of the 13 traditional areas of MEP. Silicon microwave devices, one of the major three-terminal microwave semiconductor devices, have matured into low-noise devices in the late 1960s and their device performance has approached the theoretical limit of the theoretical design. 1966, the United States Meade proposed gallium arsenide metal semiconductor field effect transistor, or gallium arsenide field effect transistor (referred to as GaAsMES FET). Gallium arsenide materials in the mobility and other aspects of the performance much better than the silicon material, the microwave performance of GaAs MES FET silicon microwave devices even more unattainable, therefore,