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本文用ＤＣＤ法测量了注入能量为１６０ｋｅＶ，剂量为１×１０１４～３×１０１６ｃｍ－２，退火温度为５００～７００℃的Ａｓ＋注入Ｓｉ＜１１１＞的Ｒｏｃｋｉｎｇｃｕｒｖｅ．在建立台阶模型和分布函数的基础上，用ＸＲＤ动力学理论和最小二乘法拟合实验曲线，得到晶格应变随注入深度的变化，以及在不同退火温度下的恢复情况．实验发现，剂量为１×１０１６ｃｍ－２、６００℃退火，Ｒｏｃｋｉｎｇｃｕｒｖｅ出现双峰，说明有固相外延层形成．剂量大于１×１０１５ｃｍ－２，呈现了非晶特性．
In this paper, the Rockingcurve with As + implanted Si <111> with an implantation energy of 160keV, a dose of 1 × 1014 ~ 3 × 1016cm-2 and an annealing temperature of 500 ~ 700 ℃ was measured by DCD method. Based on the establishment of the step model and the distribution function, the experimental curves were fitted by XRD dynamic theory and the least square method. The variation of lattice strain with the implantation depth and the recovery at different annealing temperatures were obtained. Experiments showed that the dose of 1 × 1016cm-2,600 ℃ annealing, Rockingcurve bimodal, indicating the formation of solid-phase epitaxial layer. Dose greater than 1 × 1015cm-2, showing the amorphous nature.