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场限环结构以其简单的工艺和较高的效率,在垂直双扩散金属氧化物场效应晶体管终端结构中得到广泛应用,但其性能的提高也有限制。沟槽型终端结构对刻蚀工艺要求较高,并未在实际生产中得到大量应用。将场限环终端结构与沟槽终端结构相结合,设计了一种沟槽型场限环终端,在149.7μm的有效终端长度上实现了708V的仿真击穿电压。此结构可以得到较大的结深,硅体内部高电场区距离表面较远,硅表面电场仅为1.83E5V/cm,具有较高的可靠性。同时,工艺中只增加了沟槽刻蚀和斜离子里注入,没有增加额外的掩膜。
Field-limiting ring structure with its simple technology and high efficiency, vertical dual diffused metal oxide field effect transistor termination structure has been widely used, but its performance is also limited. Trench-type terminal structure of the etching process requires a higher, not in the actual production of a large number of applications. By combining the field limiting ring terminal structure with the trench terminal structure, a trench type field limiting ring terminal was designed to achieve a simulated breakdown voltage of 708V at a valid terminal length of 149.7μm. This structure can get larger junction depth. The high electric field inside the silicon body is far away from the surface and the electric field of the silicon surface is only 1.83E5V / cm, which has high reliability. At the same time, only trench etching and oblique ion implantation are added in the process, without adding additional masks.